MJB44H11G دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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MJB44H11G
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حجم فایل
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97.089
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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6
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi MJB44H11T4G
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Transistor Type:
NPN
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Operating Temperature:
-55°C~+150°C@(Tj)
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Collector Current (Ic):
10A
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Power Dissipation (Pd):
2W
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Transition Frequency (fT):
50MHz
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DC Current Gain (hFE@Ic,Vce):
40@4A,1V
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Collector Cut-Off Current (Icbo):
10uA
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Collector-Emitter Breakdown Voltage (Vceo):
80V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
1V@400mA,8A
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Package:
TO-263
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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Current - Collector (Ic) (Max):
10A
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Voltage - Collector Emitter Breakdown (Max):
80V
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Vce Saturation (Max) @ Ib, Ic:
1V @ 400mA, 8A
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Current - Collector Cutoff (Max):
10µA
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DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 4A, 1V
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Power - Max:
2W
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Frequency - Transition:
50MHz
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Mounting Type:
Surface Mount
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Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Supplier Device Package:
D2PAK
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Base Part Number:
MJB44
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detail:
Bipolar (BJT) Transistor NPN 80V 10A 50MHz 2W Surface Mount D2PAK
